Electronic structure and magnetic properties of hole-carrier-dopedLa2MnNiO6:La2−xSrxMnNiO6
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چکیده
منابع مشابه
investigation of the electronic properties of carbon and iii-v nanotubes
boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...
15 صفحه اولCrystal structure and electronic and magnetic properties of hexacyanoosmate(III).
The [Os(III)(CN)6]3- anion is prepared by chemical oxidation in aqueous solution and isolated as yellow prisms of [Ph4P]3[Os(III)(CN)6].6H2O (1). This species crystallizes in the triclinic space group P with cell parameters a = 13.7609(11) A, b = 16.2275(13) A, c = 17.0895(14) A, alpha = 91.4040(10) degrees , beta = 109.3600(10) degrees , gamma = 102.3970(10) degrees , V = 3497.4(5) A(3), and Z...
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L. Pisani,1 J. A. Chan,1 B. Montanari,2 and N. M. Harrison1,3 1Department of Chemistry, Imperial College London, South Kensington Campus, London SW7 2AZ, United Kingdom 2CCLRC Rutherford Appleton Laboratory, Chilton, Didcot, Oxfordshire OX11 0QX, United Kingdom 3CCLRC Daresbury Laboratory, Daresbury, Warrington WA4 4AD, United Kingdom Received 7 November 2006; revised manuscript received 28 Nov...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2010
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.81.224402